Metal-Assisted Exfoliation of Two-Dimensional Materials: From Mechanisms to Large-Scale Applications

Abstract

In the post-Moore era, large-area manufacturing of high-quality two-dimensional (2D) materials remains a central bottleneck for the industrialization of next-generation microelectronic and optoelectronic devices. Conventional mechanical exfoliation is limited by randomness and small lateral size, whereas chemical vapor deposition inevitably introduces grain boundaries, stress, and interfacial contamination, making it difficult to achieve both high quality and scalability. Metal-assisted exfoliation (MAE) enables controllable exfoliation and nondestructive transfer of large-area, high-quality monolayer 2D materials via precise modulation of metal-2D interfacial interactions dominated by strain-induced decoupling and atomic intercalation. This article systematically outlines the interfacial physical mechanisms and technological evolution of MAE, and highlights its state-of-the-art applications in patterned transfer, high-performance field-effect transistors, and complementary logic circuits, aiming to provide a firm theoretical and technical basis for advancing 2D materials from fundamental research toward practical applications.